CrystEngComm, 2023, 25,5541-5547
DOI: 10.1039/D3CE00010A, Paper
DOI: 10.1039/D3CE00010A, Paper
Open Access
This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.Anna Aleksandrova, Christian Golz, Klaus Biermann, Achim Trampert, Mykhaylo Semtsiv, Helmut Weidlich, William Ted Masselink, Yukihiko Takagaki
For InAs quantum-well structures grown on InP, the dislocations generated in the strain relaxation is confined in the compositionally graded buffer layer, leaving the two-dimensional electron gases nearly unscattered by the defects.
The content of this RSS Feed (c) The Royal Society of Chemistry
For InAs quantum-well structures grown on InP, the dislocations generated in the strain relaxation is confined in the compositionally graded buffer layer, leaving the two-dimensional electron gases nearly unscattered by the defects.
The content of this RSS Feed (c) The Royal Society of Chemistry