J. Mater. Chem. A, 2023, Advance Article
DOI: 10.1039/D3TA04322C, Paper
DOI: 10.1039/D3TA04322C, Paper
Dawei Deng, Rutong Si, Bo Wen, Nicola Seriani, Xiao-Lin Wei, Wen-Jin Yin, Ralph Gebauer
A nonvolatile self-doping strategy through fabricating two different 2D polar semiconductors (GaN/MoSSe) into vdW heterostructures could theoretically achieve high concentrations of carriers (>3.48 × 1012).
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
A nonvolatile self-doping strategy through fabricating two different 2D polar semiconductors (GaN/MoSSe) into vdW heterostructures could theoretically achieve high concentrations of carriers (>3.48 × 1012).
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry