CrystEngComm, 2023, Advance Article
DOI: 10.1039/D3CE00515A, Paper
DOI: 10.1039/D3CE00515A, Paper
Open Access
This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.Gianfranco Sfuncia, Giuseppe Nicotra, Filippo Giannazzo, Béla Pécz, Gueorgui Kostov Gueorguiev, Anelia Kakanakova-Georgieva
An atomic resolution image of an intercalated structure at a graphene/SiC interface along the growth direction which is determined as a buckled GaN monolayer at the immediate interface with an underlying SiC substrate and ultrathin Ga2O3 on top.
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An atomic resolution image of an intercalated structure at a graphene/SiC interface along the growth direction which is determined as a buckled GaN monolayer at the immediate interface with an underlying SiC substrate and ultrathin Ga2O3 on top.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry