Energy Environ. Sci., 2024, 17,2018-2027
DOI: 10.1039/D3EE04539K, Paper
DOI: 10.1039/D3EE04539K, Paper
Liqing Xu, Xiaoying Wang, Yang Wang, Zhibin Gao, Xiangdong Ding, Yu Xiao
High PFave of 24.18 μW cm−1 K−2 and ZTave of 1.01 at 300–773 K have been achieved in n-type Pb1.02Se–0.2%Cu thermoelectric through dual Pb and Cu interstitial doping, and it exceeds other Se/S-based (Te free) n-type thermoelectric materials.
The content of this RSS Feed (c) The Royal Society of Chemistry
High PFave of 24.18 μW cm−1 K−2 and ZTave of 1.01 at 300–773 K have been achieved in n-type Pb1.02Se–0.2%Cu thermoelectric through dual Pb and Cu interstitial doping, and it exceeds other Se/S-based (Te free) n-type thermoelectric materials.
The content of this RSS Feed (c) The Royal Society of Chemistry