CrystEngComm, 2023, Advance Article
DOI: 10.1039/D3CE00478C, Paper
DOI: 10.1039/D3CE00478C, Paper
Ruiting Fang, Xiong Zhang, Shuchang Wang, Xuguang Luo, Shenyu Xu, Yifeng Xu, Zhiyi Lou, Lin Chen, Guohua Hu
High-quality non-polar a-plane GaN films are achieved with optimized miscut r-plane sapphire substrate and nucleation layers.
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High-quality non-polar a-plane GaN films are achieved with optimized miscut r-plane sapphire substrate and nucleation layers.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry