Energy Environ. Sci., 2024, 17,1904-1915
DOI: 10.1039/D3EE04187E, Paper
DOI: 10.1039/D3EE04187E, Paper
V. K. Ranganayakulu, Te-Hsien Wang, Cheng-Lung Chen, Angus Huang, Ma-Hsuan Ma, Chun-Min Wu, Wei-Han Tsai, Tsu-Lien Hung, Min-Nan Ou, Horng-Tay Jeng, Chih-Hao Lee, Kuei-Hsien Chen, Wen-Hsien Li, Madison K. Brod, G. Jeffrey Snyder, Yang-Yuan Chen
An ultrahigh zT of 2.7 at 700 K is achieved in a (Ge0.86Sb0.08Bi0.06)Te single crystal. This outstanding performance is attributed to one-dimensional-like electronic structure and the resulting strong electron–phonon interaction.
The content of this RSS Feed (c) The Royal Society of Chemistry
An ultrahigh zT of 2.7 at 700 K is achieved in a (Ge0.86Sb0.08Bi0.06)Te single crystal. This outstanding performance is attributed to one-dimensional-like electronic structure and the resulting strong electron–phonon interaction.
The content of this RSS Feed (c) The Royal Society of Chemistry