(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

CrystEngComm, 2023, Accepted Manuscript
DOI: 10.1039/D3CE00831B, Paper
Wanli Xu, Yuewen Li, Bin Li, Xiangqian Xiu, Hong Zhao, Zili Xie, Tao Tao, Peng Chen, Bin Liu, Rong Zhang, Youdou Zheng
In general, β-Ga2O3 films with (-201) out-of-orientation have been widely obtained and reported on (0001) sapphire substrates by various growth methods. In this paper, the unusual (-310)-oriented β-Ga2O3 films have...
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