Chem. Commun., 2024, 60,2938-2941
DOI: 10.1039/D3CC05572H, Communication

Yingke Ren, Hongyang Fu, Yun Li, Zhaoqian Li, Cong Li, Xingtao An
Realizing efficient FAPbI₃-based devices with high open-circuit voltage (V_OC) is still challenging, due to severe energy loss between the n-type perovskite and p-type hole-transporting layer (HTL).
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Chem. Commun., 2024, Advance Article
DOI: 10.1039/D4CC00212A, Communication

Yingke Ren, Hongyang Fu, Yingjie Sun, Zhaoqian Li, Xinge Guo, Xingtao An
The solution processed FAPbI₃ perovskite usually suffers from chaotic orientations.
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The content of this RSS Feed (c) The Royal Society of Chemistry